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New LNA from United Monolithic Semiconductors | June 10, 2013 |
Main features
This LNA features a noise figure of 2.2dB and a low power consumption of 65mA/3.5V. It represents an optimum solution for a wide range of applications from defence to commercial communication systems. The circuit is manufactured with a 0.25µm gate length pHEMT space evaluated process. Radiocomp LLC - the Official Distributor of United Monolithic Semiconductors in Russia - provides with more information onthe item. |